Integrated circuit structure and method of forming the same

ABSTRACT

An integrated circuit structure includes a first well, a second well, a third well, a first set of implants and a second set of implants. The first well includes a first dopant type, a first portion extending in a first direction and having a first width, and a second portion adjacent to the first portion of the first well, extending in the first direction and having a second width. The second well has a second dopant type and is adjacent to the first well. The third well has the second dopant type, and is adjacent to the first well. The first portion of the first well is between the second well and the third well. The first set of implants is in the first portion of the first well, the second well and the third well. The second set of implants is in the second portion of the first well.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No.16/940,334, filed Jul. 27, 2020, now U.S. Pat. No. 10,879,229, issuedDec. 29, 2020, which is a divisional of U.S. application Ser. No.15/782,183, filed Oct. 12, 2017, now U.S. Pat. No. 10,734,377, issuedAug. 4, 2020, which claims the priority of U.S. Provisional ApplicationNo. 62/427,558, filed Nov. 29, 2016, the disclosures of which areincorporated herein by reference in their entireties.

BACKGROUND

As integrated circuits become smaller in physical size, and the quantityof transistors included in the device increases, smaller line widths areused in the integrated circuits, and the transistors therein are locatedcloser together. Latchup is a type of short circuit that sometimesoccurs in integrated circuits. To prevent latchup, some integratedcircuits include tap cells. However, tap cells may increase the overallsize of the integrated circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1C are diagrams of a top view of a layout design of an ICstructure, in accordance with some embodiments.

FIGS. 2A-2D are diagrams of an IC structure, in accordance with someembodiments.

FIGS. 3A-3C are diagrams of a layout design of an IC structure, inaccordance with some embodiments.

FIGS. 4A-4C are diagrams of a top view of a layout design of an ICstructure, in accordance with some embodiments.

FIG. 5A is a diagram of a top view of a layout design of an ICstructure, in accordance with some embodiments.

FIG. 5B is a diagram of a top view of a layout design of an ICstructure, in accordance with some embodiments.

FIG. 6 is a diagram of a top view of a layout design of an IC structure,in accordance with some embodiments.

FIG. 7 is a diagram of a top view of a layout design of an IC structure,in accordance with some embodiments.

FIG. 8 is a diagram of a top view of a layout design of an IC structure,in accordance with some embodiments.

FIG. 9 is a flowchart of a method of forming an IC structure, inaccordance with some embodiments.

FIG. 10A-10B is a flowchart of a method of forming an IC structure, inaccordance with some embodiments.

FIG. 11 is a block diagram of a system of designing an IC layout design,in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides different embodiments, or examples,for implementing features of the provided subject matter. Specificexamples of components, materials, values, steps, arrangements, or thelike, are described below to simplify the present disclosure. These are,of course, merely examples and are not limiting. Other components,materials, values, steps, arrangements, or the like, are contemplated.For example, the formation of a first feature over or on a secondfeature in the description that follows may include embodiments in whichthe first and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formed betweenthe first and second features, such that the first and second featuresmay not be in direct contact. In addition, the present disclosure mayrepeat reference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with some embodiments, an IC structure includes a firstwell in a substrate, a first set of implants and a second set ofimplants. The first well includes a first dopant type, a first portionextending in a first direction and having a first width, and a secondportion adjacent to the first portion. The second portion extends in thefirst direction and has a second width greater than the first width. Thefirst set of implants are in the first portion of the first well and thesecond set of implants are in the second portion of the first well. Insome embodiments, the second set of implants in the second portion ofthe first well correspond to an active region of the IC structure. Insome embodiments, the second set of implants in the second portion ofthe first well continuously extend in the first direction, and through aset of standard cells that are adjacent to the second set of implants.In some embodiments, in comparison with other approaches, the ICstructure occupies less area than other approaches by having the secondset of implants continuously extend in the first direction, and throughadjacent standard cells.

FIGS. 1A-1C are diagrams of a top view of a layout design 100 of an ICstructure, in accordance with some embodiments. For ease ofillustration, FIG. 1A is a top view of a first layout level of layoutdesign 100, and FIG. 1B is a top view of a second layout level of layoutdesign 100. In some embodiments, FIG. 1C includes additional elementsnot shown in FIG. 1A or 1B for ease of illustration.

Layout design 100 includes a first well layout pattern 104 adjacent to asecond well layout pattern 106. The first well layout pattern 104 andthe second well layout pattern 106 are on a first layout level. Thefirst well layout pattern 104 has a T-shape. The first well layoutpattern 104 is usable to manufacture a first well 204 (shown in FIGS.2A-2D) in a substrate 201 of an IC structure 200.

The first well layout pattern 104 includes a first layout pattern 104 aand a second layout pattern 104 b.

The first layout pattern 104 a extends in a first direction X and has afirst width W1. The first layout pattern 104 a is usable to manufacturea corresponding first portion 204 a (FIG. 2A) of the first well 204. Insome embodiments, first layout pattern 104 a and second layout pattern104 b are a single, continuous layout pattern. In some embodiments,first layout pattern 104 a and second layout pattern 104 b arediscretely generated albeit continuous layout patterns.

The second layout pattern 104 b is adjacent to the first layout pattern104 a. The second layout pattern 104 b extends in the first direction Xand has a second width W2. The second width W2 is greater than the firstwidth W1. In some embodiments, the second width W2 is less than or equalto the first width W1. The second layout pattern 104 b is usable tomanufacture a corresponding second portion 204 b (FIGS. 2B-C) of thefirst well 204.

The second well layout pattern 106 is usable to manufacture a secondwell 206 (shown in FIGS. 2A-2D) in the substrate 202 of the IC structure200.

The second well layout pattern 106 includes a layout pattern 106 a, alayout pattern 106 b and a layout pattern 106 c. Layout pattern 106 a isusable to manufacture a corresponding first portion 206 a of the secondwell 206 in substrate 201′ of the IC structure 200. In some embodiments,layout patterns 106 b and 106 c are usable to manufacture correspondingregion 201 a and 201 b of substrate 201 of IC structure 200 (FIG. 2A).

Layout pattern 106 a is adjacent to the second layout pattern 104 b.Layout pattern 106 a extends in the first direction X and has a fifthwidth W5 greater than the first width W1. In some embodiments, the fifthwidth W5 is less than or equal to the first width W1.

Layout pattern 106 b or 106 c extends in the first direction X and has aseventh width W7 less than the second width W2. In some embodiments, theseventh width W7 is greater than or equal to the second width W2. Firstlayout pattern 104 a is adjacent to and between layout patterns 106 band 106 c.

One or more edges of layout pattern 104 a or 106 b is aligned with agridline 130 a. Gridline 130 a or 130 b extends in a second direction Ywhich is different from the first direction X. One or more edges oflayout pattern 104 a or 106 c is aligned with gridline 130 b. One ormore edges of layout pattern 104 a, 106 b or 106 c is aligned with agridline 132 a. Gridline 132 a extends in the first direction X. Thesecond layout pattern 104 b is between the first layout pattern 104 aand the layout pattern 106 a of the second well layout pattern 106.

Layout design 100 further includes a first set of implant layoutpatterns 110 (FIGS. 1B-1C) adjacent to a second set of implant layoutpatterns 108 (FIGS. 1B-1C). The first set of implant layout patterns 110and the second set of implant layout patterns 108 are on a second layoutlevel. The second layout level is different from the first layout level.The second layout level is above the first layout level. In someembodiments, the second layout level is below or the same as the firstlayout level.

The first set of implant layout patterns 110 includes an implant layoutpattern 110 a, a layout pattern 110 b, and a layout pattern 110 c.

Implant layout pattern 110 a is usable to manufacture a correspondingfirst set of implants 210 a 1 and 210 a 2 (FIG. 2A) in the first portion204 a of the first well 204 of IC structure 200 (FIGS. 2A-2D). First setof implants 210 a 1 and 210 a 2 are collectively referred to as “firstset of implants 230.”

Layout pattern 110 b or 110 c is usable to manufacture a correspondingregion 201 c and 201 d of substrate 201′ of IC structure 200 (FIG. 2D).

Implant layout pattern 110 a extends in the first direction X, overlapsthe layout pattern 104 a and has a third width W3 greater than the firstwidth W1. In some embodiments, the third width W3 is less than or equalto the first width W1. An edge of the implant layout pattern 110 a isaligned with an edge of second layout pattern 104 b or an edge of layoutpattern 106 b or 106 c along gridline 132 a.

Implant layout pattern 110 b or 110 c is over layout pattern 106 a. Anedge of the implant layout pattern 110 b or 110 c is aligned with anedge of layout pattern 106 a or an edge of second layout pattern 104 balong gridline 132 b.

The second set of implant layout patterns 108 includes an implant layoutpattern 108 a and an implant layout pattern 108 b. The second set ofimplant layout patterns 108 have a T-shape.

Implant layout pattern 108 a is usable to manufacture a correspondingsecond set of implants 208 a 1, 208 a 2 (FIG. 2D) in the first portion206 a of the second well 206 of the IC structure 200 (FIG. 2D). Secondset of implants 208 a 1, 208 a 2 are collectively referred to as the“second set of implants 236.” Implant layout pattern 108 b is usable tomanufacture a corresponding third set of implants 208 b (collectivelyreferred to as “third set of implants 238”) in the second portion 204 bof the first well 204 of the IC structure 200 (FIGS. 2B-2C).

Implant layout pattern 108 b is adjacent to and in between implantlayout pattern 108 a and implant layout pattern 110 a. Implant layoutpattern 108 b extends in the first direction X, is over the secondlayout pattern 104 b and has a fourth width W4. An edge of the implantlayout pattern 108 b is aligned with an edge of second layout pattern104 b along gridline 132 a or 132 b.

Implant layout pattern 108 a extends in the first direction X, is overthe layout pattern 106 a and has a sixth width W6. The sixth width W6 isless than the fourth width W4 or the fifth width W5. In someembodiments, the sixth width W6 is greater than or equal to at least oneof the fourth width W4 or the fifth width W5.

Implant layout pattern 108 a is between gridlines 130 a and 130 b. Anedge of implant layout pattern 108 a is aligned with gridline 130 a, 130b. An edge of the implant layout pattern 108 a is aligned with an edgeof layout pattern 106 a along gridline 132 b. Implant layout pattern 108a is between implant layout patterns 110 b and 110 c. In someembodiments, implant layout pattern 108 a and implant layout pattern 108b are a single, continuous layout pattern. In some embodiments, implantlayout pattern 108 a and implant layout pattern 108 b are discretelygenerated albeit continuous layout patterns.

Implant layout pattern 108 b is between the implant layout pattern 110 aand the implant layout pattern 108 a.

As shown in FIG. 1C, layout design 100 further includes an active region112 (FIG. 1C), an active region 114, an active region 116 and an activeregion 118.

Active region 112, 114, 116 or 118 is a portion of layout design 100representing an active region (or oxide-definition (OD) regions) in ICstructure 200. In some embodiments, at least one of active region 112,114, 116 or 118 represents at least one drain region or source region ofa transistor device. In some embodiments, layout design 100 correspondsto a layout design of a tap cell. In some embodiments, a tap cell is aregion of the IC structure 200 (shown in FIGS. 2A-2D) utilized toprovide a bias voltage (e.g., VDD or VSS) for substrate 201, 201′ or202, first well 204 or second well 206.

Active region 112 represents the portion of the layout design 100coupled to the first supply voltage VDD to provide the first supplyvoltage VDD as a bias voltage to the first set of implants 230 of thefirst well 204. In some embodiments, active region 112 represents theportion of the layout design 100 coupled to the second supply voltageVSS to provide the second supply voltage VSS as the bias voltage to thefirst set of implants 230 of the first well 204.

Active region 118 represents the portion of the layout design 100coupled to the second supply voltage VSS to provide the second supplyvoltage VSS as the bias voltage to the second set of implants 236 of thesecond well 206. In some embodiments, active region 118 represents theportion of the layout design 100 coupled to the first supply voltage VDDto provide the first supply voltage VDD as the bias voltage to thesecond set of implants 236 of the second well 206.

Active region 112 or active region 118 extends in the first direction Xbetween gate layout patterns 122 d and 122 f.

Active region 114 or 116 extends in the first direction X continuouslythrough layout design 100. For example, in the first direction X, theactive region 114 or 116 extends beyond an edge of gate layout pattern122 a or 122 f. A width of the active region 112 or 118 is less than awidth of active region 114 or 116. The width of active region 112 isequal to the width of active region 118. In some embodiments, the widthof active region 112 is different than the width of active region 118.The width of active region 114 is the same as the width of active region116. In some embodiments, the width of active region 114 is differentthan the width of active region 116. Layout design 100 has a height H1in the second direction Y.

Layout design 100 further includes a set of gate layout patterns 122 a,. . . , 122 i (collectively referred to as “set of gate layout patterns120”) on a third layout level. Other configurations or numbers of gatelayout patterns in the set of gate layout patterns 120 is within thescope of the present disclosure. Third layout level is different fromthe first layout level or the second layout level. The third layoutlevel is above the first or second layout level. In some embodiments,the third layout level is below or the same as the first layout level orthe second layout level. In some embodiments, the third layout level isbetween the first layout level and the second layout level.

The set of gate layout patterns 120 extend in the second direction Y andoverlap the first well layout pattern 104 and the second well layoutpattern 106. Each gate layout pattern of the set of gate layout patterns120 extends in the second direction Y, and is separated from each otherin the first direction X. The set of gate layout patterns 120 is usableto manufacture a corresponding set of gates 220 (FIGS. 2A-2D) in ICstructure 200.

In some embodiments, second layout pattern 104 b, implant layout pattern108 b and at least active region 114 or 116 extend continuously throughthe edges of layout design 100 or through adjacent cells (e.g., shown inFIGS. 3A-3C or 6-8 ). In some embodiments, by continuously extending thesecond layout pattern 104 b, implant layout pattern 108 b or activeregion 114, 116 through the edges of layout design 100 or throughadjacent cells (e.g., shown in FIGS. 3A-3C or 6-8 ) results in the widthW2 of the second layout pattern 104 b, the width W4 of the implantlayout pattern 108 b or the width W4′ of the active region 114, 116being increased causing an increase in the compressive strain of ICstructure 200 (e.g., shown in FIGS. 2A-2D) and layout design 100compared to other approaches. By increasing the compressive strain of ICstructure 200 (e.g., shown in FIGS. 2A-2D) and layout design 100, thedriving current capability of IC structure 200 and layout design 100 isincreased, and IC structure 200 and layout design 100 have betterperformance than other approaches. In some embodiments, by having animproved compressive strain, IC structure 200 or layout design 100 canhave similar driving current capability as other approaches whileoccupying less area than the other approaches resulting in an overallreduction in physical size of layout design 100 or IC structure 200. Insome embodiments, by the second width W2 of second layout pattern 104 bbeing greater than the first width W1 of first layout pattern 104 a, orthe width W4 of implant layout pattern 108 b being greater than thewidth W6 of implant layout pattern 108 a, or the width W4′ of the activeregion 114, 116 being greater than the width W1 of the active region, atleast the second layout pattern 104 b, implant layout pattern 108 b oractive region 114 or 116 extends continuously through the edges oflayout design 100 or through adjacent cells (e.g., shown in FIGS. 3A-3Cor 6-8 ). In some embodiments, the active region 114 or active region116 have at least one SiGe channel (not labelled). In some embodiments,by continuously extending active region 114 or active region 116 throughthe edges of layout design 100 or through adjacent cells (e.g., shown inFIGS. 3A-3C or 6-8 ), causes an increase in the compressive strain ofthe SiGe channel of IC structure 200 (e.g., shown in FIGS. 2A-2D) andlayout design 100 compared to other approaches. In some embodiments, byincreasing the compressive strain of the SiGe channel of IC structure200 (e.g., shown in FIGS. 2A-2D) and layout design 100, the advantagesfor the SiGe channel of IC structure 200 and layout design 100 aremaximized, including one or more of an increased current gain andincreased driving current capability of IC structure 200 and layoutdesign 100. In some embodiments, by having an improved compressivestrain of the SiGe channel of layout design 100 or IC structure 200, ICstructure 200 or layout design 100 can have similar driving currentcapability as other approaches while occupying less area than the otherapproaches resulting in an overall reduction in physical size of layoutdesign 100 or IC structure 200. In some embodiments, IC structure 200 orlayout design 100 can have similar driving current capability as otherapproaches while occupying 60% less area than the other approachesresulting in at least an overall 2.5% reduction in physical area of ICstructure 200.

In some embodiments, the at least one SiGe channel in active region 114or 116 results in integrated circuits (i.e., integrated circuit 200)having SiGe channels that provide 30% to 50% more current than otherapproaches (e.g., Si channels). In some embodiments, by continuouslyextending active region 114 or active region 116 through the edges oflayout design 100 or through adjacent standard cells (e.g., shown inFIGS. 3A-3C or 6-8 ), layout design 100 does not have a break in activeregion 114 and active region 116 through layout design 100 resulting inless ion degradation within layout design 100 and also along the edge oflayout design 100 thereby causing improved driving current capabilityover other approaches.

FIGS. 2A, 2B, 2C and 2D are diagrams of an IC structure 200, inaccordance with some embodiments. FIG. 2A is a cross-sectional view ofIC structure 200 corresponding to layout design 100 as intersected byplane A-A′, FIG. 2B is a cross-sectional view of IC structure 200corresponding to layout design 100 as intersected by plane B-B′, andFIG. 2C is a cross-sectional view of IC structure 200 corresponding tolayout design 100 as intersected by plane C-C′, and FIG. 2D is across-sectional view of IC structure 200 corresponding to layout design100 as intersected by plane D-D′, in accordance with some embodiments.IC structure 200 is manufactured by layout design 100.

IC structure 200 includes a first well 204 and a second well 206. Thefirst well 204 includes a first dopant type impurity. The first dopanttype is an n-type dopant impurity. In some embodiments, the first dopanttype is a p-type dopant impurity. The first well 204 includes a firstportion 204 a and a second portion 204 b. The first portion 204 a (FIG.2A) of the first well 204 is in substrate 201. The first portion 204 aextends in the second direction Y from gridline 130 a to gridline 130 b.The second portion 204 b (FIGS. 2B-2C) of the first well 204 is insubstrate 202. In some embodiments, substrate 201 or 201′ includes Si,Ge, SiGe, InAs, InGaAs, InAlAs, InP, or the like. In some embodiments,substrate 202 includes SiGe, Si, Ge, InAs, InGaAs, InAlAs, InP, or thelike. In some embodiments, the first well 204 includes Si, Ge, SiGe,InAs, InGaAs, InAlAs, InP, or the like. In some embodiments, the secondwell 206 includes Si, Ge, SiGe, InAs, InGaAs, InAlAs, InP, or the like.

The second well 206 (FIG. 2D) includes a second dopant type impurity.The second dopant type is a p-type dopant impurity. In some embodiments,the second dopant type is an n-type dopant impurity. The second well 206includes a first portion 206 a. The first portion 206 a (FIG. 2D) of thesecond well 206 is in substrate 201′. The first portion 206 a of thesecond well 206 has the second dopant type (e.g., p-type). In someembodiments, the first portion 206 a of the second well 206 has thefirst dopant type (e.g., n-type). The first portion 206 a extends in thesecond direction Y from gridline 130 a to gridline 130 b.

IC structure 200 further includes a first set of implants 230 (FIG. 2A),a second set of implants 236 (FIG. 2D) and a third set of implants 238(FIGS. 2B-2C). In some embodiments, first set of implants 230 includesP, As, or the like. In some embodiments, second set of implants 236includes B, Ga, or the like. In some embodiments, third set of implants238 includes B, Ga, or the like.

Implants 210 a 1 and 210 a 2, of the first set of implants 230 (FIG. 2A)are within the first portion 204 a of the first well 204.

In some embodiments, each implant of the first set of implants 230 hasthe first dopant type (e.g., n-type), extends in the second direction Y,and is separated from each other in the first direction X. In someembodiments, at least one implant of the first set of implants 230 isconfigured to be coupled to the first supply voltage VDD. In someembodiments, at least one implant of the first set of implants 230 hasthe second dopant type (e.g., p-type) and is configured to be coupled tothe second supply voltage VSS.

Implants 208 a 1 and 208 a 2 of the second set of implants 236 (FIG. 2D)are within the first portion 206 a of the second well 206. In someembodiments, each implant of the second set of implants 236 has thesecond dopant type (e.g., p-type), extends in the second direction Y,and is separated from each other in the first direction X. In someembodiments, at least one implant of the second set of implants 236 isconfigured to be coupled to the second supply voltage VSS. In someembodiments, at least one implant of the second set of implants 236 hasthe first dopant type (e.g., n-type) and is configured to be coupled tothe first supply voltage VDD.

Implants 208 b of the third set of implants 238 (FIGS. 2B-2C) are withinthe second portion 204 b of the first well 204. In some embodiments,each implant of the third set of implants 238 has the second dopant type(e.g., p-type), extends in the second direction Y and is separated fromeach other in the first direction X. In some embodiments, at least oneimplant of the third set of implants 238 has the first dopant type(e.g., n-type).

IC structure 200 further includes a set of gates 220 (FIGS. 2A-2D). Theset of gates 220 includes gates 222 a, 222 b, . . . , 222 i. Otherconfigurations or numbers of gates in the set of gates 220 is within thescope of the present disclosure. Each gate of the set of gates 220extends in the second direction Y, and is separated from each other inthe first direction X. The set of gates 220 represent one or more gates220 of one or more NMOS or PMOS transistor devices. Other transistortypes are within the scope of the present disclosure. As shown in FIGS.2B-2C, the set of gates 220 is over substrate 202. As shown in FIGS. 2Aand 2D, gates 222 a, 222 b, 222 c, 222 g, 222 h and 222 i of the set ofgates 220 is embedded in substrate 201 or 201′. A portion of gates 222 dand 222 f of the set of gates 220 are partially embedded in substrate201 or 201′. The set of gates 220 are over the third set of implants238. At least an implant of the first set of implants 230 or the secondset of implants 236 is between a pair of gates of the set of gates 220.For example, in FIG. 2A, implant 210 a 1 is between gates 222 d and 222e, and implant 210 a 2 is between gates 222 e and 222 f. Similarly, inFIG. 2D, implant 208 a 1 is between gates 222 d and 222 e, and implant208 a 2 is between gates 222 e and 222 f. As shown in FIG. 2A, gate 222e is between implants 210 a 1 and 210 a 2. As shown in FIG. 2D, gate 222e is between implants 208 a 1 and 208 a 2. As shown in FIGS. 2B-2C, eachof the implants 208 b of the third set of implants 238 are between apair of gates of the set of gates 220. For example, in FIGS. 2B-2C,implant 208 b is between gates 222 d and 222 e. Other configurations ofimplants of the first set of implants 230, the second set of implants236 or the third set of implants are within the scope of the presentdisclosure.

Regions 201 a and 201 b of substrate 201 of IC structure 200 (FIG. 2A)are manufactured by corresponding layout patterns 106 b and 106 c ofFIGS. 1A-1C. In some embodiments, regions 201 a and 201 b are portionsof the same substrate (e.g., substrate 201) separated from each other byregion 212. Regions 201 c and 201 d of substrate 201′ of IC structure200 (FIG. 2D) are manufactured by corresponding layout patterns 110 band 110 c of FIGS. 1A-1C. In some embodiments, regions 201 c and 201 dare portions of the same substrate (e.g., substrate 201′) separated fromeach other by region 218.

Region 212 corresponds to active region 112 of layout design 100 of FIG.1C. Region 212 is a tap cell of IC structure 200 and is coupled to thefirst voltage supply VDD. In other words, region 212 is configured toprovide the first voltage supply VDD as the bias voltage (e.g., VDD) tothe first portion 204 a of the first well 204 by coupling the firstvoltage supply VDD to the implant region 210 a 1, 210 a 2. In someembodiments, region 212 is coupled to the second voltage supply VSS andis configured to provide the second voltage supply VSS as the biasvoltage (e.g., VSS) to the first portion 204 a of the first well 204. Insome embodiments, the first region 204 a of the first well 204 ispositioned within region 212. In some embodiments, the first region 204a of the first well 204 extends in the second direction Y from gate 222d to gate 222 f.

Region 218 corresponds to active region 118 of layout design 100 of FIG.1C. Region 218 is a tap cell of IC structure 200 and is coupled to thesecond voltage supply VSS. In other words, region 218 is configured toprovide the second voltage supply VSS as the bias voltage (e.g., VSS) tothe second well 206 by coupling the second voltage supply VSS to theimplant region 208 a 1, 208 a 2. In some embodiments, region 218 iscoupled to the first voltage supply VDD and is configured to provide thefirst voltage supply VDD as the bias voltage (e.g., VDD) to the secondwell 206. In some embodiments, the first region 206 a of the second well206 is positioned within region 218. In some embodiments, the firstregion 206 a of the second well 206 extends in the second direction Yfrom gate 222 d to gate 222 f.

FIGS. 3A-3C are diagrams of a layout design 300 of an IC structure, inaccordance with some embodiments. For ease of illustration, FIG. 3B is atop view of a first layout level of layout design 300, and FIG. 3C is atop view of a second layout level of layout design 300. In someembodiments, FIG. 3A includes additional elements not shown in FIG. 3Bor 3C for ease of illustration. Components that are the same or similarto those in FIGS. 1A-1C are given the same reference numbers, anddetailed description thereof is thus omitted.

Layout design 300 includes an array of cells 301 having 4 rows and 4columns. The 4 rows of cells are arranged in the first direction X andthe 4 columns of cells are arranged in the second direction Y. Four rowsand four columns of cells are used for illustration. A different numberof rows or columns is within the contemplated scope of the presentdisclosure.

Each row of array 301 includes tap cells 302 or 308 alternating with aset of standard cells 304 or 306. For example, row 0 of array of cells301 includes tap cells 302[0] or 308[0] alternating with a set ofstandard cells 304[0] or 306[0]. Similarly, row 1 of array of cells 301includes tap cells 302[1] or 308[1] alternating with a set of standardcells 304[1] or 306[1].

Each of the tap cells in tap cells 302 or 308 shown in layout design 300are the same as layout design 100 and will not be described. Forexample, tap cells 308[0], 308[1], 302[0] and 302[1] are the same aslayout design 100. Tap cells 308[1] and 302[0] are rotated 180 degreeswith respect to tap cell layout 308[0] and 302[1].

Set of standard cells 304 or 306 includes one or more standard cells. Insome embodiments, a standard cell is a logic gate cell. In someembodiments, a logic gate cell includes an AND, OR, NAND, NOR, XOR, INV,AND-OR-Invert (AOI), OR-AND-Invert (OAI), MUX, Flip-flop, BUFF, Latch,delay, clock cells or the like. In some embodiments, a standard cell isa memory cell. In some embodiments, a memory cell includes a staticrandom access memory (SRAM), a dynamic RAM (DRAM), a resistive RAM(RRAM), a magnetoresistive RAM (MRAM), read only memory (ROM), or thelike. In some embodiments, a standard cell includes one or more activeor passive elements. Examples of active elements include, but are notlimited to, transistors and diodes. Examples of transistors include, butare not limited to, metal oxide semiconductor field effect transistors(MOSFET), complementary metal oxide semiconductor (CMOS) transistors,bipolar junction transistors (BJT), high voltage transistors, highfrequency transistors, p-channel and/or n-channel field effecttransistors (PFETs/NFETs), etc.), FinFETs, planar MOS transistors withraised source/drain, or the like. Examples of passive elements include,but are not limited to, capacitors, inductors, fuses, resistors, or thelike.

Set of standard cells 304[0] includes active regions 312, 314, 318 and320. Set of standard cells 306[0] includes active regions 316, 318, 320and 322. Set of standard cells 304 or 306 include other features notshown for ease of illustration.

Active regions 312 or 316 are a variation of active region 118. Activeregions 314 or 322 are a variation of active region 112. Active regions312 and 314 define portions of the active regions of the set of standardcells 304[0]. Active regions 316 and 322 define portions of the activeregions of the set of standard cells 306[0].

Active region 318 or 320 corresponds to active region 116 or 114,respectively.

Active regions 312 and 316 are separated by tap cell 302[0]. Similarly,active regions 314 and 322 are separated by tap cell 302[0]. Activeregions 312, 314, 316 and 322 do not extend continuously through thelayout design 300.

Active regions 318 and 320 in row 0 of implant layout pattern 330[0]extend continuously through the layout design 300. Similarly, the activeregions in rows 1, 2 or 3 of corresponding implant layout pattern330[1], 330[2] or 330[3] extend continuously through the layout design300. In some embodiments, active region 318, active region 320, activeregions in rows 1, 2 and 3, standard cells 304 or standard cell 306,each have at least one SiGe channel (not labelled). In some embodiments,by continuously extending active region 318, active region 320 or theactive regions in rows 1, 2 and 3 through the edges of layout design 300or through adjacent standard cells 304, 306 causes an increase in thecompressive strain of the SiGe channel of layout design 300 compared toother approaches. In some embodiments, by increasing the compressivestrain of the SiGe channel of layout design 300, layout design 300 doesnot have reduced mobility degradation and current degradation like otherapproaches, resulting in increased driving current capability of acircuit manufactured by layout design 300 and better performance thanother approaches. In some embodiments, by having an improved compressivestrain of the SiGe channel of layout design 300, layout design 300 canhave similar driving current capability as other approaches whileoccupying less area than the other approaches resulting in an overallreduction in physical size of layout design 300. In some embodiments,SiGe devices having at least one SiGe channel in one or more of activeregion 318, active region 320, active regions in rows 1, 2 and 3,standard cells 304 or standard cell 306 provides 30% to 50% more currentcompared to other approaches (e.g., Si channels).

In some embodiments, by continuously extending active region 318, activeregion 320, or active regions in rows 1, 2 and 3 through the edges oflayout design 300 or through adjacent standard cells 304 or standardcell 306, layout design 300 does not have a break in active region 318,active region 320, or active regions in rows 1, 2 and 3 along the edgeof tap cells 302 and 308 resulting in less ion degradation along theedge of tap cell 302 and 308 and further resulting in improved drivingcurrent capability over other approaches. In other approaches, dummycells are inserted between cells located along breaks in the activeregion to reduce the effect of ion degradation thereby causing anincrease of the area. In some embodiments, by not having a break inactive region 318, active region 320, or active regions in rows 1, 2 and3, layout design 300 does not utilize dummy cells to overcome iondegradation along the edge of tap cells 302 and 308 and layout design300 thereby causing a reduction in the size and area of layout design300 compared to other approaches using inserted dummy cells. Implantlayout patterns 330[0], 330[1], 330[2] and 330[3] are the same as secondset of implant layout patterns 108. Implant layout patterns 332[0],332[1], 332[2] and 332[3] are the same as first set of implant layoutpatterns 110.

Well layout pattern 338 or 340 (FIG. 3B) are the same as first welllayout pattern 104. Well layout pattern 338 or 340 extends continuouslythrough the layout design 300 in the first direction X.

Well layout pattern 342 (FIG. 3B) is the same as second well layoutpattern 106. Well layout pattern 342 does not extend continuouslythrough the layout design 300 in the first direction X.

FIGS. 4A-4C are top views of a layout design 400 of an IC structure, inaccordance with some embodiments. For ease of illustration, FIG. 4B is atop view of a first layout level of layout design 400, and FIG. 4C is atop view of a second layout level of layout design 400. In someembodiments, FIG. 4A includes additional elements not shown in FIG. 4Bor 4C for ease of illustration.

Layout design 400 includes a set of standard cells 401 and a tap cell402. Layout design 400 is divided into an array having 4 rows (e.g.,rows A, B, C and D) and 2 columns (Col. 1 and 2). Four rows and twocolumns of cells are used for illustration. A different number of rowsor columns is within the contemplated scope of the present disclosure.Each of set of standard cells 401 and tap cell 402 are within a separatecolumn (Col. 1 or 2) of the array of layout design 400.

Set of standard cells 401 corresponds to set of standard cells 304[0],304[1], 306[0] or 306[1] of FIGS. 3A-3C. Tap cell 402 is a variation oflayout design 100 of FIGS. 1A-1C. In comparison with layout design 100of FIG. 1A, implant layout pattern 408 does not extend continuouslythrough tap cell 402. Layout design 400 has a height H2 in the seconddirection Y. In some embodiments, height H2 of layout design 400 is thesame as height H1 of layout design 100 of FIGS. 1A-1C. In someembodiments, height H2 of layout design 400 is different from height H1of layout design 100 of FIGS. 1A-1C.

Set of standard cells 401 includes cell region 401 a, 401 b, 401 c and401 d. Cell region 401 a is in row A of the array, cell region 401 b isin row B of the array, cell region 401 c is in row C of the array andcell region 401 d is in row D of the array. Cell region 401 a or 401 dincludes at least one n-type standard cell. In some embodiments, cellregion 401 a or 401 d includes at least one p-type standard cell. Cellregion 401 b or 401 c includes at least one p-type standard cell. Insome embodiments, cell region 401 b or 401 c includes at least onen-type standard cell.

Tap cell 402 includes a first well layout pattern 404, a second welllayout pattern 406, a first set of implant layout patterns 410 and asecond set of implant layout patterns 408.

First well layout pattern 404 is a variation of first well layoutpattern 104. First well layout pattern 404 does not include a first welllayout pattern 104 a.

Second well layout pattern 406 is a variation of second well layoutpattern 106. In comparison with second well layout pattern 106 of FIGS.1A-1C, second well layout pattern 406 further includes layout pattern406 d. Layout pattern 406 d replaces first well layout pattern 104 a ofFIGS. 1A-1C. Layout patterns 106 b, 106 c and 406 d extend continuouslythrough the tap cell 402.

First set of implant layout patterns 410 is a variation of first set ofimplant layout patterns 110. First set of implant layout patterns 410includes implant layout pattern 108 a, implant layout pattern 110 b,implant layout pattern 110 c, an implant layout pattern 410 a, animplant layout pattern 410 b and an implant layout pattern 410 c.

Implant layout patterns 410 a and 410 b are a variation of implantlayout pattern 110 a. Implant layout pattern 110 a of FIGS. 1A-1C isdivided into implant layout patterns 410 a and 410 b. Implant layoutpatterns 410 a and 410 b are separated from each other by implant layoutpattern 408 c.

Implant layout pattern 410 c is a variation of implant layout pattern110 a, 110 b or 110 c. Implant layout pattern 410 c replaces a centerportion of implant layout pattern 108 b. Implant layout pattern 410C islocated in a center portion of tap cell 402. The center portion of tapcell 402 is between gridlines 130 a and 130 b in the first direction X,and between gridlines 132 a and 132 b in the second direction Y.

Second set of implant layout patterns 408 is a variation of second setof implant layout patterns 108. Second set of implant layout patterns408 includes implant layout pattern 108 a, an implant layout pattern 408b, an implant layout pattern 408 c, and an implant layout pattern 408 d.

Implant layout patterns 408 b and 408 d are a variation of implantlayout pattern 108 b. For example, implant layout pattern 408 b andimplant layout pattern 408 d are separated from each other by implantlayout pattern 410 c.

Implant layout pattern 408 c is a variation of implant layout pattern108 a. For example, implant layout pattern 408 c and implant layoutpattern 108 a are separated from each other by implant layout pattern410 c.

Tap cell 402 further includes active regions 412, 414, 416 and 418.Active region 412 or 418 is a variation of active region 118 of FIGS.1A-1C. Active region 412 is located in row A of the array, and activeregion 418 is located in row D of the array.

Active region 414 or 416 is a variation of active region 112 of FIGS.1A-1C. Active region 414 is located in row B of the array, and activeregion 416 is located in row C of the array.

FIG. 5A is a top view of a layout design 500 of an integrated circuitstructure, in accordance with some embodiments.

Layout design 500 is a variation of layout design 400 of FIGS. 4A-4C. Incomparison with layout design 400 of FIGS. 4A-4C, layout design 500includes tap cell 502 instead of tap cell 402. Tap cell 502 is avariation of tap cell 402. Tap cell 502 has a height H3 in the seconddirection Y. In some embodiments, height H3 of tap cell 502 is one halfof the height H2 of tap cell 402 from layout design 400. In someembodiments, height H3 of tap cell 502 is one half of the height H1 oflayout design 100 of FIGS. 1A-1C. Other variations of the height H3 oftap cell 502, height H2 of tap cell 402 or height H1 of layout design100 are included in the scope of the present disclosure.

Tap cell 502 does not include the portion of tap cell 402 in row A and Bof the array. For example, tap cell 502 does not include layout patterns106 b, 106 c and 406 d, implant layout patterns 410 a, 410 b and 408 c,and active region 412 of row A of the array of tap cell 402.

The elements in rows B and C of the array of tap cell 502 are dividedalong gridline 132 d such that tap cell 502 does not include theelements of tap cell 402 between gridlines 132 d and 132 a. In otherwords, second well layout pattern 404 and implant layout patterns 408 d,410 c, 408 b of FIGS. 4A-4C are divided along gridline 132 d such thatthe portion of these elements in row B of the array are not included intap cell 502, and the portion of these elements in row C of the arrayare included in tap cell 502. For example, first well layout pattern 404a of Row C of tap cell 502 is first well layout pattern 404 of tap cell402 positioned in a single row. Similarly, implant layout pattern 408 d1 of Row C of tap cell 502 is implant layout pattern 408 d of tap cell402 positioned in a single row. Similarly, implant layout pattern 408 b1 of Row C of tap cell 502 is implant layout pattern 408 b of tap cell402 positioned in a single row, and implant layout pattern 410 c 1 ofRow C of tap cell 502 is implant layout pattern 410 c of tap cell 402positioned in a single row. Tap cell 502 also does not include activeregion 414.

FIG. 5B is a top view of a layout design 500′ of an IC structure, inaccordance with some embodiments.

Layout design 500′ is a variation of layout design 500 of FIG. 5A. Incomparison with layout design 500 of FIG. 5A, layout design 500′ furtherincludes tap portion 503 and tap portion 503′. Tap cell 502 is locatedbetween tap portion 503 and tap portion 503′. Tap cell 502, tap portion503 and tap portion 503′ correspond to a tap cell 501. In other words,tap cell 501 includes tap cell 502, tap portion 503 and tap portion503′.

Tap portion 503 includes a first well layout pattern 504 a, a secondwell layout pattern 506 a, an implant layout pattern 508 a, an implantlayout pattern 510 a, an active region 516 a, an active region 518 a,and a set of gate layout patterns 522 a.

First well layout pattern 504 a is a variation of the second layoutpattern 104 b of well layout pattern 104 (FIG. 1A). First well layoutpattern 504 a corresponds to first well layout pattern 404 a extended ina third direction −X (e.g., a negative X direction).

Second well layout pattern 506 a is a variation of layout pattern 106 a(FIG. 1A) of well layout pattern 106. Second well layout pattern 506 acorresponds to layout pattern 106 a (FIG. 1A) extended in the thirddirection −X (e.g., negative X direction). In some embodiments, thethird direction −X (e.g., negative X direction) is a direction oppositefrom the first direction X.

Implant layout pattern 508 a is a variation of implant layout pattern108 b (FIG. 1B) of second set of implant layout pattern 106. Implantlayout pattern 508 a corresponds to implant layout pattern 108 b (FIG.1B) extended in the third direction −X (e.g., negative X direction).

Implant layout pattern 510 a is a variation of implant layout pattern110 b (FIG. 1B) of first set of implant layout patterns 110. Implantlayout pattern 510 a corresponds to implant layout pattern 110 b (FIG.1B) extended in the third direction −X (e.g., negative X direction).

Active regions 516 a and 518 a are variations of active regions 416 and418, respectively. Active regions 516 a and 518 a correspond to activeregions 416 and 418, respectively, positioned in tap portion 503 andextending from an edge of tap cell 502 to an edge of tap portion 503.

Set of gate layout patterns 522 a are a variation of set of gate layoutpatterns 120. Set of gate layout patterns 522 a extend in the seconddirection Y, and overlap tap portion 503.

Tap portion 503′ is between tap cell 502 and set of standard cells 401.Tap portion 503′ includes a well layout pattern 504 b, a well layoutpattern 506 b, an implant layout pattern 508 b, an implant layoutpattern 510 b, an active region 516 b, an active region 518 b, and a setof gate layout patterns 522 b.

First well layout pattern 504 b is a variation of the second layoutpattern 104 b (FIG. 1A) of well layout pattern 104. First well layoutpattern 504 b corresponds to first well layout pattern 404 a extended inthe first direction X.

Second well layout pattern 506 b is a variation of layout pattern 106 a(FIG. 1A) of well layout pattern 106. Second well layout pattern 506 bcorresponds to layout pattern 106 a (FIG. 1A) extended in the firstdirection X.

Implant layout patterns 508 b and 510 b are variations of correspondingimplant layout pattern 108 b (FIG. 1B) of second set of implant layoutpattern 106 and implant layout pattern 110 c (FIG. 1B) of first set ofimplant layout patterns 110. Implant layout pattern 508 b corresponds toimplant layout pattern 108 b (FIG. 1B) extended in the first directionX. Implant layout pattern 510 b corresponds to implant layout pattern110 c (FIG. 1B) extended in the first direction X.

Active regions 516 b and 518 b are variations of corresponding activeregions 416 and 418. Active region 516 b corresponds to active region416 positioned in tap portion 503′ and extending from an edge of tapcell 502 to an edge of tap portion 503 or an edge of set of standardcells 401. Active region 518 b corresponds to active region 418positioned in tap portion 503′ and extending from an edge of tap cell502 to an edge of tap portion 503′ or an edge of set of standard cells401.

Set of gate layout patterns 522 b are a variation of set of gate layoutpatterns 120. Set of gate layout patterns 522 b extend in the seconddirection, and overlap tap portion 503′.

FIG. 6 is a top view of a layout design 600 of an IC structure, inaccordance with some embodiments.

Layout design 600 is a variation of layout design 300. In comparisonwith layout design 300 of FIGS. 3A-3C, layout design 600 includes anarray of cells 601 having 4 rows (e.g., Rows 0, 1, 2 and 3) and 7columns (e.g., Col. 0, 1, 2, 3, 4, 5, 6). The 4 rows of cells arearranged in the first direction X and the 7 columns of cells arearranged in the second direction Y. Four rows and seven columns of cellsare used for illustration. A different number of rows or columns iswithin the contemplated scope of the present disclosure.

Array of cells 601 includes tap cells 602, 606, 610 and 614, and set ofstandard cells 604, 608 and 612. Tap cell 602, 606, 610 or 614 includesa corresponding tap cell 602[0], 606[0], 610[0] or 614[0] in row 0 ofarray of cells 601. Tap cell 602, 606, 610 or 614 or set of standardcells 604, 608 or 612 include other features not shown for ease ofillustration.

Tap cell 606 corresponds to column 3 of layout design 300 and tap cell614 corresponds to column 1 of layout design 300. One or more tap cellsin tap cell 606 or 614 corresponds to layout design 100. For example,tap cell 606[0] or 614[0] corresponds to tap cell 100 of FIGS. 1A-1C.For ease of illustration, each of the tap cells in FIG. 6 are notlabelled. For example, the tap cell in row 0 of (e.g., tap cell 606[0])is labelled, but tap cell 606 includes tap cells in rows 1, 2 and 3 thatare not labelled for ease of illustration. Similarly, the tap cell inrow 0 of (e.g., tap cell 614[0]) is labelled, but tap cell 614 includestap cells in rows 1, 2 and 3 that are not labelled for ease ofillustration. Other variations of tap cells 602 or 610 are included inthe scope of the present disclosure. One or more tap cells in tap cells602 or 610 corresponds to layout design 500′ (FIG. 5B). For example, tapcell 602[0] or 610[0] corresponds to tap cell 501 of FIG. 5B. Similarly,one or more of tap cells 602[1], 602[2], 602[3] or 602[4] corresponds totap cell 501 of FIG. 5B. For ease of illustration, the tap cell in row 0of (e.g., tap cell 610[0]) is labelled, but tap cell 610 includes tapcells in rows 1, 2 and 3 that are not labelled for ease of illustration.In some embodiments, one or more tap cells in tap cell 602 or 610corresponds to layout design 400 of FIGS. 4A-4C or layout design 500 ofFIG. 5A. Other variations of tap cells 602 or 610 are included in thescope of the present disclosure. Set of standard cells 608 or 612corresponds to column 2 of layout design 300 (FIGS. 3A-3C). In someembodiments, set of standard cell 604 corresponds to column 0 of the setof standard cells 304 in FIGS. 3A-3C. In some embodiments, one or moreof set of standard cells 604, 608 or 612 corresponds to the set ofstandard cells 401 in FIGS. 5A-5B. Other variations of standard cells604, 608 or 612 are included in the scope of the present disclosure.

Each row of array 601 includes tap cell 602, 606, 610 or 614 alternatingwith a set of standard cells 604, 608 or 612. For example, row 0 ofarray of cells 601 includes tap cell 602[0], 606[0], 610[0] or 614[0]alternating with the set of standard cells 604, 608 or 612.

Tap cell 602, 606, 610 or 614 is located in corresponding column 0, 2, 4or 6 in array of cells 601. Standard cell 604, 608 or 612 is located incorresponding column 1, 3 or 5 in array of cells 601.

Each of the tap cells in tap cells 602 or 610 shown in layout design 600are the same as tap cell 501 (FIG. 5B). Tap cells 602[0] and 610[0] arerotated 180 degrees with respect to each other.

Each of the tap cells in tap cells 606 or 614 shown in layout design 600corresponds to layout design 100 (FIGS. 1A-1C). For example, tap cells606[0] and 614[0] corresponds to layout design 100. Tap cells 606[0] and614[0] are rotated 180 degrees with respect to each other.

Row 0 of array of cells 601 includes active regions 613, 615, 616, 618,620, 622, 624 and 626.

Active region 616, 618, 620 or 622 is a variation of correspondingactive region 312, 314, 316 and 318 (FIGS. 3A-3C). Active region 624 or626 corresponds to active region 118 or 112 in layout design 100 (FIGS.1A-1C), respectively.

Active region 613 and 616 are separated by active region 624 of tap cell606[0]. Active region 615 and 622 are separated by active region 626 oftap cell 606[0]. Active regions 613, 615, 616, 622, 624 and 626 do notextend continuously through one or more of the tap cells 602, 606, 610or 614 in layout design 600.

Active regions 618 and 620 in row 0 extend continuously through tap cell606[0] in layout design 600. Similarly, the active regions in rows B andC of row 0 extend continuously through tap cell 614[0] of layout design600. Rows B and C of layout design 600 correspond to implant layoutpattern 330[0] (FIGS. 3A-3C). The active regions in rows 1, 2 or 3extend continuously through the corresponding tap cell in tap cell 606or 614.

FIG. 7 is a diagram of a top view of a layout design 700 of an ICstructure, in accordance with some embodiments. Layout design 700 is avariation of layout design 600. In comparison with layout design 600 ofFIG. 6 , layout design 700 replaces tap cell 602 with tap cell 702, andreplaces tap cell 610 with tap cell 710.

Tap cell 702 or 710 is a variation of corresponding tap cell 602 or 610of FIG. 6 . At least one tap cell of tap cell 702 or 710 has a height H1that is different from a height H3 of at least one tap cell in tap cells602 or 610.

Tap cell 702 includes tap cell 702[0] and 702[1]. In some embodiments,tap cell 702[0] has a height H1/2 that is equal to height H3 of tap cell602[1]. Tap cell 702[1] has a height H1 that is twice as large as aheight H3 of tap cell 602[1].

Tap cell 710 includes tap cell 710[0]. Tap cell 710[0] has a height H1that is twice as large as a height H3 of tap cell 610[0]. A differentrelationship between the heights (e.g., H1 and H3) of tap cell 702[0],702[1], 710[0], 602[0] and 610[0] is within the contemplated scope ofthe present disclosure.

In some embodiments, active region 618, active region 620, activeregions in rows 0, 1, 2 and 3, standard cells 604, standard cell 608 orstandard cell 612, each have at least one SiGe channel (not labelled).In some embodiments, by continuously extending active region 618, activeregion 620 or the active regions in rows 1, 2 and 3 through tap cells606 and 614 or through adjacent standard cells 604, 608 or 612, causesan increase in the compressive strain of the SiGe channels of layoutdesign 600 or 700 compared to other approaches. In some embodiments, byincreasing the compressive strain of the SiGe channels of layout design600 or 700, layout design 600 or 700 does not have reduced mobilitydegradation and current degradation like other approaches, yieldingincreased driving current capability of a circuit manufactured by layoutdesign 600 or 700 and better performance than other approaches. In someembodiments, by having an improved compressive strain of the SiGechannels of layout design 600 or 700, layout design 600 or 700 can havesimilar driving current capability as other approaches while occupyingless area than the other approaches resulting in an overall reduction inphysical size of layout design 600 or 700. In some embodiments, SiGedevices having at least one SiGe channel in one or more of active region618, active region 620, active regions in rows 0, 1, 2 and 3, standardcells 604, standard cell 608 or standard cell 612 provides 30% to 50%more current compared to other approaches (e.g., Si channels).

In some embodiments, by continuously extending active region 618, activeregion 620 or active regions in rows 0, 1, 2 and 3 through tap cells 606and 614 or through adjacent standard cells 604, standard cell 608 orstandard cell 612, layout design 600 or 700 does not have a break inactive region 618, active region 620 or active regions in rows 0, 1, 2and 3 in tap cell 606, tap cell 614 or standard cells 604, 608 or 612resulting in less ion degradation along the edge or interface of tapcells 606 and 614 or standard cells 604, 608 or 612 and furtherresulting in improved driving current capability over other approaches.In other approaches, dummy cells are inserted between cells locatedalong breaks in the active region to reduce the effect of iondegradation thereby causing an increase of the area. In someembodiments, by not having a break in active region 618, active region620, active regions in rows 0, 1, 2 and 3 along the edge or interface oftap cells 606 and 614 and standard cells 604, 608 or 612, layout design600 or 700 does not utilize dummy cells to overcome ion degradationalong the edge of tap cells 606 and 614 and layout design 600 or 700thereby causing a reduction in the size and area of layout design 600 or700 compared to other approaches using inserted dummy cells.

FIG. 8 is a top view of a layout design 800 of an IC structure, inaccordance with some embodiments. Layout design 800 is a variation oflayout design 600 or 700.

Layout design 800 is an array of cells 801 having 4 rows (Rows A, B, Cand D) and 3 columns (Cols. 0, 1 and 2). The 4 rows of cells arearranged in the first direction X and the 3 columns of cells arearranged in the second direction Y. Four rows and three columns of cellsare used for illustration. A different number of rows or columns iswithin the contemplated scope of the present disclosure.

Layout design 800 includes a control circuit layout pattern 802 betweena tap cell 804 and the set of standard cells 401. Layout design 800further includes a header cell layout pattern 806 adjacent to the tapcell 804, and a set of gate layout patterns 808 extending in the seconddirection Y. Set of gate layout patterns 808 overlap control circuitlayout pattern 802, tap cell 804 and header cell layout pattern 806.

Control circuit layout pattern 802 is adjacent to the set of standardcells 401. Control circuit layout pattern 802 is usable to manufacture acontrol circuit (not shown) in substrate 201, 201′ or 202 of ICstructure 200. Control circuit layout pattern 802 is in column 0 ofarray of cells 801. Control circuit layout pattern 802 extends acrossrows A-D in the array of cells 801. In some embodiments, the controlcircuit (not shown) manufactured by control circuit layout pattern 802is a buffer circuit configured to control the switching on or off of aheader cell (e.g., header cell manufactured by header cell layoutpattern 806). In some embodiments, the buffer circuit (not shown)includes a series of cascaded buffers (not shown) or an even number ofinverters (not shown) coupled in series.

Tap cell 804 is a variation of tap cell 302 or 308 (shown in FIGS.3A-3C) or layout design 100 of FIGS. 1A-1C. Tap cell 804 includes aportion of layout design 100. For example, row A and B of tap cell 804corresponds to the portion of layout design 100 between gridline 132 cand gridline 132 d. Tap cell 804 includes an active region 812. Activeregion 812 corresponds to active region 112 of FIGS. 1A-1C.

Header cell layout pattern 806 extends in the first direction X. Headercell layout pattern 806 includes a well layout pattern 806 a, a welllayout pattern 806 b, implant layout pattern 806 c and implant layoutpattern 806 d. Header cell layout pattern 806 is usable to manufactureone or more header cells (not shown) in substrate 201, 201′ or 202 of ICstructure 200. In some embodiments, a header cell (not shown) is aswitch device, a transistor device, or the like. In some embodiments, aheader cell is one or more p-type, n-type transistor devices, or thelike. A header cell is configured to have a voltage drop across itsterminals which adjusts the voltage provided to one or more standardcells.

Well layout pattern 806 a corresponds to second layout pattern 104 b(FIGS. 1A-1C). Well layout pattern 806 a is located in rows A-D for afirst portion 807 a of header cell layout pattern 806. Well layoutpattern 806 a is located in rows A and D for a second portion 807 b ofheader cell layout pattern 806.

Well layout patterns 806 a and 806 b extend in the first direction X.Well layout pattern 806 b corresponds to layout pattern 106 a (FIGS.1A-1C). Well layout pattern 806 b is located in rows B and C of layoutdesign 800. In some embodiments, well layout pattern 806 b is locatedalong an edge of header cell layout pattern 806. Well layout pattern 806b is adjacent to well layout pattern 806 a.

Implant layout pattern 806 c corresponds to implant layout pattern 108 b(FIGS. 1A-1C). Implant layout pattern 806 c is adjacent to implantlayout pattern 806 d. Implant layout pattern 806 c extends in the firstdirection X, and is over the well layout pattern 806 a.

Implant layout pattern 806 d corresponds to implant layout pattern 110 bor 110 c (FIGS. 1A-1C). Implant layout pattern 806 d extends in thefirst direction X or the second direction Y, and is over the well layoutpattern 806 b.

Active region 816 or 820 is located in corresponding row A or D in arrayof cells 801. Active region 818 is located in rows B and C in array ofcells 801. Active region 816, 818 or 820 corresponds to active region114, 116 (FIGS. 1A-1C) or active region 318 or 320 (FIGS. 3A-3C).

Active regions 816 and 820 in corresponding rows A and D extendcontinuously through tap cell 804, control circuit layout pattern 802 orheader cell layout pattern 806 in layout design 800. Similarly, activeregion 818 in rows B and C extends continuously through header celllayout pattern 806. In some embodiments, the active region 816 or activeregion 820 of header cell 806 each have at least one SiGe channel (notlabelled). In some embodiments, by continuously extending active region816 or active region 820 through the edges of layout design 800 orthrough adjacent standard cells 401 a, 401 b, causes an increase in thecompressive strain of each of the SiGe channels of header cell 806 andlayout design 800 compared to other approaches. In some embodiments, byincreasing the compressive strain of the SiGe channels of header cell806 and layout design 800, the driving current capability of a circuitmanufactured by layout design 800 is increased resulting in betterperformance than other approaches. In some embodiments, by having animproved compressive strain of the SiGe channel of header cell 806 andlayout design 800, layout design 800 can have similar driving currentcapability as other approaches while occupying less area than the otherapproaches resulting in an overall reduction in physical size of layoutdesign 800. In some embodiments, the at least one SiGe channel of headercell 806 in active region 816 or 820 provides at least 5% more currentcompared to other approaches (e.g., Si channels). In some embodiments,by continuously extending active region 816 or active region 820 throughthe edges of layout design 800 or through adjacent standard cells 401 a,401 b, header cell 806 and layout design 800 do not have a break inactive region 816 and active region 820 along the edge of header cell806 and layout design 800 resulting in less ion degradation along theedge of header cell 806 and layout design 800 and further resulting inimproved driving current capability over other approaches. In otherapproaches, dummy cells are inserted between cells located along breaksin the active region to reduce the effect of ion degradation therebycausing an increase of the area. In some embodiments, by not having abreak in the active region 816 and active region 820, layout design 800does not utilize dummy cells to overcome ion degradation along the edgeof header cell 806 and layout design 800 thereby causing a reduction inthe size and area of layout design 800 compared to other approachesusing inserted dummy cells.

Set of gate layout patterns 808 extend in the second direction Y. Set ofgate layout patterns 808 overlap control circuit layout pattern 802, tapcell 804 or header cell layout pattern 806. Set of gate layout patterns808 corresponds to a variation of set of gate layout patterns 120, 522 aor 522 b. In some embodiments, set of gate layout patterns 808 is on thethird layout level of layout design 800. Other configurations or numbersof gate layout patterns in the set of gate layout patterns 808 is withinthe scope of the present disclosure.

FIG. 9 is a flowchart of a method 900 of forming an IC structure inaccordance with some embodiments. It is understood that additionaloperations may be performed before, during, and/or after the method 900depicted in FIG. 9 , and that some other processes may only be brieflydescribed herein. In some embodiments, the method 900 is usable to formintegrated circuits, such as IC structure 200 (FIGS. 2A-2D), other ICstructures or the like.

In operation 902 of method 900, a tap cell layout design 100 of anintegrated circuit 200 is generated or the tap cell layout design 100 ofthe integrated circuit is placed on a layout level. In some embodiments,the layout level is located above a substrate layout pattern. In someembodiments, the tap cell layout pattern generated by operation 902 istap cell layout pattern 302, 308, 402, 501, 502, 602, 606, 610, 614,702, 710 or 804.

In operation 904, a standard cell layout pattern 306[1] of theintegrated circuit 200 is generated or the standard cell layout pattern306[1] of the integrated circuit is placed on the layout level. In someembodiments, the standard cell layout pattern generated by operation 904is standard cell layout pattern 304, 306, 401, 604, 608 or 612 or headercell layout pattern 806.

In operation 906, an IC structure 200 is manufactured based on the tapcell layout design 100 or the standard cell layout pattern 306[1].

FIGS. 10A-10B are a flowchart of a method 1000 of manufacturing an IC inaccordance with some embodiments. It is understood that additionaloperations may be performed before, during, and/or after the method 1000depicted in FIGS. 10A-10B, and that some other processes may only bebriefly described herein. In some embodiments, the method 1000 is usableto form ICs, such as IC structure 200 (FIGS. 2A-2D), other IC structuresor the like.

In operation 1002 of method 1000, a first well layout pattern 104 isgenerated. In some embodiments, operation 1002 comprises operation 1002a. In operation 1002 a of method 1000, a first layout pattern 104 a anda second layout pattern 104 b are generated.

Method 1000 continues with operation 1004, where the first well layoutpattern 104 is placed on a first layout level. In some embodiments,operation 1004 comprises operation 1004 a. In operation 1004 a of method1000, the first layout pattern 104 a and the second layout pattern 104 bare placed on the first layout level. In some embodiments, the firstlayout level is a level above substrate 201, 201′ or 202.

Method 1000 continues with operation 1006, where a second well layoutpattern 106 is generated. In some embodiments, the second well layoutpattern of method 1000 is one or more of layout pattern 106 a, layoutpattern 106 b or layout pattern 106 c.

Method 1000 continues with operation 1008, where a second well layoutpattern 106 is placed on the first layout level. The second well layoutpattern 106 is placed adjacent to first well layout pattern 104 as shownin FIGS. 1A-1C.

Method 1000 continues with operation 1010, where a first implant layoutpattern (e.g., implant layout pattern 110 a) is generated. In someembodiments, the first implant layout pattern of method 1000 is firstset of implant layout patterns 110 or first set of implant patterns 410.In some embodiments, the first implant layout pattern of method 1000 isone or more of implant layout pattern 110 b, 110 c, 332[0], 332[1],332[2], 332[3], 410, 510 a, 510 b, 806 c or 806 d.

Method 1000 continues with operation 1012, where the first implantlayout pattern (e.g., implant layout pattern 110 a) is placed on asecond layout level. In some embodiments, the second layout level is thelevel above the first layout level. In some embodiments, the firstimplant layout pattern (e.g., implant layout pattern 110 a) is placedover the first layout pattern 104 a.

Method 1000 continues with operation 1014, where a second implant layoutpattern (e.g., implant layout pattern 108 b) is generated. In someembodiments, the second implant layout pattern of method 1000 is secondset of implant layout patterns 108 or second set of implant patterns408. In some embodiments, the second implant layout pattern of method1000 is one or more of implant layout pattern 108 a, 330[0], 330[1],330[2], 330[3], 408, 410, 508 a, 508 b, 806 c or 806 d.

Method 1000 continues with operation 1016, where the second implantlayout pattern (e.g., implant layout pattern 108 b) is placed on thesecond layout level. In some embodiments, the second implant layoutpattern (e.g., implant layout pattern 108 b) is placed over the secondlayout pattern 104 b. In some embodiments, the second layout pattern 104b is between the first layout pattern 104 a and the second well layoutpattern 106. In some embodiments, the second implant layout pattern(e.g., implant layout pattern 108 b) is between the first implant layoutpattern (e.g., implant layout pattern 110 a) and the third implantlayout pattern (e.g., implant layout pattern 108 a).

Method 1000 continues with operation 1018, where a third implant layoutpattern (e.g., implant layout pattern 108 a) is generated. In someembodiments, the third implant layout pattern of method 1000 is secondset of implant layout patterns 108 or second set of implant patterns408. In some embodiments, the third implant layout pattern of method1000 is one or more of implant layout pattern 108 b, 330[0], 330[1],330[2], 330[3], 408, 410, 508 a, 508 b, 806 c or 806 d.

Method 1000 continues with operation 1020, where the third implantlayout pattern (e.g., implant layout pattern 108 a) is placed on thesecond layout level. In some embodiments, the third implant layoutpattern (e.g., implant layout pattern 108 a) is placed over layoutpattern 106 a.

Method 1000 continues with operation 1022, where a set of gate layoutpatterns 120 is generated. In some embodiments, the set of gate layoutpatterns of method 1000 is one or more of set of gate layout patterns520 or 808.

Method 1000 continues with operation 1024, where the set of gate layoutpatterns 120 is placed on a third layout level. Third layout level isdifferent from the first layout level or the second layout level. Insome embodiments, the third layout level is the level above the firstand second layout level.

Method 1000 continues with operation 1026, where a third well layoutpattern (e.g., layout pattern 338 or 340) is generated. In someembodiments, the third well layout pattern of method 1000 is one or moreof layout pattern 104 a, 104 b, 106 a, 106 b, 106 c, well layout pattern342, first well layout pattern 404, second well layout pattern 406, orwell layout pattern 506 a, 506 b, 806 a, 806 b, 806 c, 806 d.

Method 1000 continues with operation 1028, where the third well layoutpattern (e.g., layout pattern 338 or 340) is placed on the first layoutlevel. The third well layout pattern (e.g., layout pattern 338 or 340)is adjacent to the first layout pattern 104 a. In some embodiments, thethird well layout pattern (e.g., layout pattern 338 or 340) is a portionof the second layout pattern 104 b. In some embodiments, the third welllayout pattern (e.g., layout pattern 338 or 340) is a separate layoutpattern from the second layout pattern 104 b.

Method 1000 continues with operation 1030, where a fourth implant layoutpattern (e.g., implant layout pattern 330[0]) is generated. Fourthimplant layout pattern (e.g., implant layout pattern 330[0]) is over thethird well layout pattern (e.g., layout pattern 338 or 340). In someembodiments, the fourth implant layout pattern of method 1000 is one ormore of implant layout pattern 108 a, 108 b, 330[0], 330[1], 330[2],330[3], 332[0], 332[1], 332[2], 344, 346, 408, 410, 508 a, 508 b, 806 cor 806 d.

In some embodiments, at least one of the second layout pattern 104 b,the third well layout pattern (e.g., layout pattern 338 or 340) or thefourth implant layout pattern (e.g., implant layout pattern 330[0])continuously extend through the set of standard cell layout patterns(e.g., 304[0], 306[0], 401, 604, 608, 612) in the first direction X. Insome embodiments, at least one of the first layout pattern 104 a, thethird well layout pattern (e.g., layout pattern 342) or the fourthimplant layout pattern (e.g., implant layout pattern 332[0]) do notcontinuously extend through the set of standard cell layout patterns(e.g., 304[0], 306[0], 401, 604, 608, 612) in the first direction X.

Method 1000 continues with operation 1032, where the fourth implantlayout pattern (e.g., implant layout pattern 330[0]) is placed on thesecond layout level.

In some embodiments, one or more of operations 1002, 1006, 1010, 1014,1018, 1022, 1026 or 1030 is not performed.

One or more of operations 902, 904 or 1002-1032 is performed by aprocessing device configured to execute instructions for manufacturingan IC, such as IC structure 200. In some embodiments, one or more ofoperations 902, 904 or 1002-1032 is performed using a same processingdevice as that used in a different one or more of operations 902, 904 or1002-1032. In some embodiments, a different processing device is used toperform one or more of operations 902, 904 or 1002-1032 from that usedto perform a different one or more of operations 902, 904 or 1002-1032.

FIG. 11 is a schematic view of a system 1100 for designing an IC layoutdesign in accordance with some embodiments. System 1100 includes ahardware processor 1102 and a non-transitory, computer readable storagemedium 1104 encoded with, i.e., storing, the computer program code 1106,i.e., a set of executable instructions. Computer readable storage medium1104 is also encoded with instructions 1107 for interfacing withmanufacturing machines for producing the integrated circuit. Theprocessor 1102 is electrically coupled to the computer readable storagemedium 1104 via a bus 1108. The processor 1102 is also electricallycoupled to an I/O interface 1110 by bus 1108. A network interface 1112is also electrically connected to the processor 1102 via bus 1108.Network interface 1112 is connected to a network 1114, so that processor1102 and computer readable storage medium 1104 are capable of connectingto external elements via network 1114. The processor 1102 is configuredto execute the computer program code 1106 encoded in the computerreadable storage medium 1104 in order to cause system 1100 to be usablefor performing a portion or all of the operations as described in method900 or 1000.

In some embodiments, the processor 1102 is a central processing unit(CPU), a multi-processor, a distributed processing system, anapplication specific integrated circuit (ASIC), and/or a suitableprocessing unit.

In some embodiments, the computer readable storage medium 1104 is anelectronic, magnetic, optical, electromagnetic, infrared, and/or asemiconductor system (or apparatus or device). For example, the computerreadable storage medium 1104 includes a semiconductor or solid-statememory, a magnetic tape, a removable computer diskette, a random accessmemory (RAM), a read-only memory (ROM), a rigid magnetic disk, and/or anoptical disk. In some embodiments using optical disks, the computerreadable storage medium 1104 includes a compact disk-read only memory(CD-ROM), a compact disk-read/write (CD-R/W), and/or a digital videodisc (DVD).

In some embodiments, the storage medium 1104 stores the computer programcode 1106 configured to cause system 1100 to perform method 900 or 1000.In some embodiments, the storage medium 1104 also stores informationneeded for performing method 900 or 1000 as well as informationgenerated during performing method 900 or 1000, such as layout design1116, tap cell layout pattern 1118, first well layout pattern 1120,second well layout pattern 1122, third well layout pattern 1124, fourthwell layout pattern 1126, first implant layout pattern 1128, secondimplant layout pattern 1130, third implant layout pattern 1132, fourthimplant layout pattern 1134, standard cell library 1136, standard celllayout pattern 1138, user interface 1140, and/or a set of executableinstructions to perform the operation of method 900 or 1000.

In some embodiments, the storage medium 1104 stores instructions 1107for interfacing with manufacturing machines. The instructions 1107enable processor 1102 to generate manufacturing instructions readable bythe manufacturing machines to effectively implement method 900 or 1000during a manufacturing process.

System 1100 includes I/O interface 1110. I/O interface 1110 is coupledto external circuitry. In some embodiments, I/O interface 1110 includesa keyboard, keypad, mouse, trackball, trackpad, and/or cursor directionkeys for communicating information and commands to processor 1102.

System 1100 also includes network interface 1112 coupled to theprocessor 1102. Network interface 1112 allows system 1100 to communicatewith network 1114, to which one or more other computer systems areconnected. Network interface 1112 includes wireless network interfacessuch as BLUETOOTH, WIFI, WIMAX, GPRS, or WCDMA; or wired networkinterface such as ETHERNET, USB, or IEEE-1394. In some embodiments,method 900 or 1000 is implemented in two or more systems 1100, andinformation such as layout design, tap cell layout pattern, first welllayout pattern, second well layout pattern, third well layout pattern,fourth well layout pattern, first implant layout pattern, second implantlayout pattern, third implant layout pattern, fourth implant layoutpattern, standard cell library, standard cell layout pattern and userinterface are exchanged between different systems 1100 by network 1114.

System 1100 is configured to receive information related to a layoutdesign through I/O interface 1110 or network interface 1112. Theinformation is transferred to processor 1102 by bus 1108 to determine alayout design for producing IC structure 200. The layout design is thenstored in computer readable medium 1104 as layout design 1116. System1100 is configured to receive information related to a tap cell layoutpattern through I/O interface 1110 or network interface 1112. Theinformation is stored in computer readable medium 1104 as tap celllayout pattern 1118. System 1100 is configured to receive informationrelated to a first well layout pattern through I/O interface 1110 ornetwork interface 1112. The information is stored in computer readablemedium 1104 as first well layout pattern 1120. System 1100 is configuredto receive information related to a second well layout pattern throughI/O interface 1110 or network interface 1112. The information is storedin computer readable medium 1104 as second well layout pattern 1122.System 1100 is configured to receive information related to a third welllayout pattern through I/O interface 1110 or network interface 1112. Theinformation is stored in computer readable medium 1104 as third welllayout pattern 1124. System 1100 is configured to receive informationrelated to a fourth well layout pattern through I/O interface 1110 ornetwork interface 1112. The information is stored in computer readablemedium 1104 as fourth well layout pattern 1126. System 1100 isconfigured to receive information related to a first implant layoutpattern through I/O interface 1110 or network interface 1112. Theinformation is stored in computer readable medium 1104 as first implantlayout pattern 1128. System 1100 is configured to receive informationrelated to a second implant layout pattern through I/O interface 1110 ornetwork interface 1112. The information is stored in computer readablemedium 1104 as second implant layout pattern 1130. System 1100 isconfigured to receive information related to a third implant layoutpattern through I/O interface 1110 or network interface 1112. Theinformation is stored in computer readable medium 1104 as third implantlayout pattern 1132. System 1100 is configured to receive informationrelated to a fourth implant layout pattern through I/O interface 1110 ornetwork interface 1112. The information is stored in computer readablemedium 1104 as fourth implant layout pattern 1134. System 1100 isconfigured to receive information related to a standard cell librarythrough I/O interface 1110 or network interface 1112. The information isstored in computer readable medium 1104 as standard cell library 1136.System 1100 is configured to receive information related to a standardcell layout pattern through I/O interface 1110 or network interface1112. The information is stored in computer readable medium 1104 asstandard cell layout pattern 1138. System 1100 is configured to receiveinformation related to a user interface through I/O interface 1110 ornetwork interface 1112. The information is stored in computer readablemedium 1104 as user interface 1140.

In some embodiments, method 900 or 1000 is implemented as a standalonesoftware application for execution by a processor. In some embodiments,method 900 or 1000 is implemented as a software application that is apart of an additional software application. In some embodiments, method900 or 1000 is implemented as a plug-in to a software application. Insome embodiments, method 900 or 1000 is implemented as a softwareapplication that is a portion of an EDA tool. In some embodiments,method 900 or 1000 is implemented as a software application that is usedby an EDA tool. In some embodiments, the EDA tool is used to generate alayout of the integrated circuit device. In some embodiments, the layoutis stored on a non-transitory computer readable medium. In someembodiments, the layout is generated using a tool such as VIRTUOSO®available from CADENCE DESIGN SYSTEMS, Inc., or another suitable layoutgenerating tool. In some embodiments, the layout is generated based on anetlist which is created based on the schematic design.

System 1100 of FIG. 11 generates layout designs (e.g., layout design100, 300, 400, 500, 500′, 600, 700, 800) of IC structure 200 that occupyless area than other approaches. Components that are the same or similarto those in FIGS. 1A-1C, 2A-2D, 3A-3C, 4A-4C, 5A-5B, 6-9 and 10A-10B aregiven the same reference numbers, and detailed description thereof isthus omitted.

One aspect of this description relates to an integrated circuitstructure. In some embodiments, the integrated circuit structureincludes a first well, a second well, a third well, a first set ofimplants and a second set of implants. In some embodiments, the firstwell includes a first dopant type, a first portion extending in a firstdirection and having a first width, and a second portion adjacent to thefirst portion of the first well, extending in the first direction andhaving a second width greater than the first width. In some embodiments,the second well has a second dopant type different from the first dopanttype, the second well adjacent to the first well. In some embodiments,the third well has the second dopant type, is adjacent to the firstwell. The first portion of the first well is between the second well andthe third well. In some embodiments, the first set of implants is in thefirst portion of the first well, the second well and the third well.Each implant of the first set of implants has the first dopant type andis separated from each other in the first direction. At least oneimplant of the first set of implants is configured to be coupled to afirst supply voltage. In some embodiments, the second set of implants isin the second portion of the first well. Each implant of the second setof implants has the second dopant type and is separated from each otherin the first direction. The second set of implants is separated from thefirst set of implants in a second direction different from the firstdirection.

Another aspect of this description relates to an integrated circuitstructure. In some embodiments, the integrated circuit structureincludes a first tap cell, a second tap cell, a first set of standardcells, a first set of implants and a second set of implants. In someembodiments, the first tap cell includes a first portion of a first wellextending in a first direction, having a first width and having a firstdopant type. In some embodiments, the first tap cell further includes asecond portion of the first well adjacent to the first portion of thefirst well, the second portion of the first well extending in the firstdirection, having the first dopant type, and having a second widthgreater than the first width. In some embodiments, the second tap cellis separated from the first tap cell in the first direction. In someembodiments, the first set of standard cells is between the first tapcell and the second tap cell. In some embodiments, the first set ofimplants is in the first portion of the first well, each implant of thefirst set of implants having the first dopant type and being separatedfrom each other in the first direction, and at least one implant of thefirst set of implants being configured to be coupled to a first supplyvoltage. In some embodiments, the second set of implants is in thesecond portion of the first well, each implant of the second set ofimplants having a second dopant type different from the first dopanttype and being separated from each other in the first direction, and thesecond set of implants being separated from the first set of implants ina second direction different from the first direction.

Still another aspect of this description relates to a method of formingan integrated circuit structure. In some embodiments, the methodincludes generating a first well layout pattern corresponding tofabricating a first well in the integrated circuit structure, the firstwell having a first dopant type. In some embodiments, the generating thefirst well layout pattern includes generating a first layout patternextending in a first direction and having a first width, the firstlayout pattern corresponding to fabricating a first portion of the firstwell. In some embodiments, the generating the first well layout patternfurther includes generating a second layout pattern extending in thefirst direction, being adjacent to the first layout pattern, and havinga second width greater than the first width, the second layout patterncorresponding to fabricating a second portion of the first well. In someembodiments, the method further includes generating a first implantlayout pattern extending in the first direction, overlapping the firstlayout pattern and having a third width greater than the first width,the first implant layout pattern corresponding to fabricating a firstset of implants in the first portion of the first well of the integratedcircuit structure, each implant of the first set of implants having thefirst dopant type and being separated from each other in the firstdirection, and at least one implant of the first set of implants beingconfigured to be coupled to a first supply voltage. In some embodiments,the method further includes generating a second implant layout patternextending in the first direction, being adjacent to the first implantlayout pattern, being over the second layout pattern and having a fourthwidth, the second implant layout pattern corresponding to fabricating asecond set of implants in the second portion of the first well of theintegrated circuit structure, each implant of the second set of implantshaving a second dopant type and being separated from each other in thefirst direction. In some embodiments, at least one of the above layoutpatterns is stored on a non-transitory computer-readable medium, and atleast one of the above operations is performed by a hardware processor.In some embodiments, the method further includes manufacturing theintegrated circuit structure based on at least one of the above layoutpatterns of the integrated circuit structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit structure comprising: afirst well, the first well comprising: a first dopant type; a firstportion extending in a first direction and having a first width, and asecond portion adjacent to the first portion of the first well,extending in the first direction and having a second width greater thanthe first width; a second well having a second dopant type differentfrom the first dopant type, the second well adjacent to the first well;a third well having the second dopant type, the third well adjacent tothe first well, the first portion of the first well is between thesecond well and the third well; a first set of implants in the firstportion of the first well, the second well and the third well, eachimplant of the first set of implants having the first dopant type andbeing separated from each other in the first direction, and at least oneimplant of the first set of implants being configured to be coupled to afirst supply voltage, and a second set of implants in the second portionof the first well, each implant of the second set of implants having thesecond dopant type and being separated from each other in the firstdirection, and the second set of implants being separated from the firstset of implants in a second direction different from the firstdirection.
 2. The integrated circuit structure of claim 1, furthercomprising: a fourth well adjacent to the second portion of the firstwell, the fourth well having the second dopant type and a third widthgreater than the first width, the fourth well being separated from thefirst portion of the first well in the second direction.
 3. Theintegrated circuit structure of claim 2, further comprising: a third setof implants in a first portion of the fourth well, each implant of thethird set of implants having the second dopant type and being separatedfrom each other in the first direction, and at least one implant of thethird set of implants being configured to be coupled to a second supplyvoltage different from the first supply voltage.
 4. The integratedcircuit structure of claim 3, further comprising: a fourth set ofimplants in a second portion of the fourth well, each implant of thefourth set of implants having the first dopant type and being separatedfrom each other in the first direction; and a fifth set of implants in athird portion of the fourth well, each implant of the fifth set ofimplants having the first dopant type and being separated from eachother in the first direction, wherein the first portion of the fourthwell is between the second portion of the fourth well and the thirdportion of the fourth well.
 5. The integrated circuit structure of claim2, further comprising: a set of standard cells comprising a set oftransistors, the set of standard cells being arranged in rows andcolumns, the second well is part of the set of standard cells, whereinthe second portion of the first well continuously extends through theset of standard cells in the first direction.
 6. The integrated circuitstructure of claim 5, wherein the second set of implants are arranged tocontinuously extend through the set of standard cells in the firstdirection, and the first portion of the first well is arranged to notcontinuously extend through the set of standard cells in the firstdirection.
 7. The integrated circuit structure of claim 6, wherein theset of transistors comprises: a sub-set of P-type transistors beinglocated within the second portion of the first well; and a sub-set ofN-type transistors being located in the second well and the fourth well.8. The integrated circuit structure of claim 1, further comprising: aset of gates extending in the second direction and overlapping the firstwell, at least an implant of the second set of implants is between apair of gates of the set of gates, and the set of gates being separatedfrom each other in the first direction.
 9. An integrated circuitstructure comprising: a first tap cell, the first tap cell comprising: afirst portion of a first well extending in a first direction, having afirst width and having a first dopant type; and a second portion of thefirst well adjacent to the first portion of the first well, the secondportion of the first well extending in the first direction, having thefirst dopant type, and having a second width greater than the firstwidth; a second tap cell separated from the first tap cell in the firstdirection; a first set of standard cells between the first tap cell andthe second tap cell; a first set of implants in the first portion of thefirst well, each implant of the first set of implants having the firstdopant type and being separated from each other in the first direction,and at least one implant of the first set of implants being configuredto be coupled to a first supply voltage; and a second set of implants inthe second portion of the first well, each implant of the second set ofimplants having a second dopant type different from the first dopanttype and being separated from each other in the first direction, and thesecond set of implants being separated from the first set of implants ina second direction different from the first direction.
 10. Theintegrated circuit structure of claim 9, wherein the first tap cellfurther comprises: a second well extending in the first direction andbeing adjacent to the second portion of the first well, the second wellhaving the second dopant type and a third width, the second well beingseparated from the first portion of the first well in the seconddirection; and a third set of implants in the second well, each implantof the third set of implants having the second dopant type and beingseparated from each other in the first direction, and at least oneimplant of the third set of implants being configured to be coupled to asecond supply voltage different from the first supply voltage.
 11. Theintegrated circuit structure of claim 10, wherein the second tap cellcomprises: a third well comprising: a first portion of the third wellextending in the first direction, having a fourth width, the firstdopant type, and being aligned with the second well in the firstdirection; and a second portion of the third well extending in the firstdirection and being adjacent to the first portion of the third well,having the first dopant type, and having a fifth width greater than thefourth width, and being aligned with the second portion of the firstwell in the first direction.
 12. The integrated circuit structure ofclaim 11, wherein the second tap cell further comprises: a fourth set ofimplants in the first portion of the third well, each implant of thefourth set of implants having the first dopant type and being separatedfrom each other in the first direction, and at least one implant of thefourth set of implants being configured to be coupled to the firstsupply voltage; and a fifth set of implants in the second portion of thethird well, each implant of the fifth set of implants having the seconddopant type and being separated from each other in the first direction.13. The integrated circuit structure of claim 12, wherein the second tapcell further comprises: a fourth well extending in the first directionand being adjacent to the second portion of the third well, the fourthwell having the second dopant type and a sixth width, the fourth wellaligned with the first portion of the third well in the seconddirection; and a sixth set of implants in the fourth well, each implantof the sixth set of implants having the second dopant type and beingseparated from each other in the first direction, and at least oneimplant of the sixth set of implants being configured to be coupled tothe second supply voltage.
 14. The integrated circuit structure of claim13, wherein the first set of standard cells comprises a set oftransistors, the first set of standard cells being arranged in rows andcolumns, the second portion of the first well continuously extendsthrough the first set of standard cells in the first direction, and isconnected to the second portion of the third well, and the second set ofimplants is arranged to continuously extend through the first set ofstandard cells in the first direction.
 15. An integrated circuitstructure comprising: a first well on a first level, the first wellcomprising: a first dopant type; a first portion extending in a firstdirection and having a first width, and a second portion adjacent to thefirst portion of the first well, extending in the first direction andhaving a second width greater than the first width; a second well havinga second dopant type different from the first dopant type, the secondwell adjacent to the first well, and on the first level; a third wellhaving the second dopant type, the third well adjacent to the firstwell, and on the first level, the first portion of the first well isbetween the second well and the third well; a first set of implants inthe first portion of the first well, the second well and the third well,each implant of the first set of implants having the first dopant typeand being separated from each other in the first direction, and at leastone implant of the first set of implants being configured to be coupledto a supply voltage; a second set of implants in the second portion ofthe first well, each implant of the second set of implants having thesecond dopant type and being separated from each other in the firstdirection, and the second set of implants being separated from the firstset of implants in a second direction different from the firstdirection; and a set of gates on a second level different from the firstlevel, the set of gates extending in the second direction andoverlapping the first well and the second well, at least an implant ofthe first set of implants is between a pair of gates of the set of gatesover the first portion of the first well, and the set of gates beingseparated from each other in the first direction.
 16. The integratedcircuit structure of claim 15, further comprising: a fourth welladjacent to the second portion of the first well, and on the firstlevel, the fourth well having the second dopant type and a third widthgreater than the first width, the fourth well being separated from thefirst portion of the first well in the second direction.
 17. Theintegrated circuit structure of claim 16, further comprising: a thirdset of implants in a first portion of the fourth well, each implant ofthe third set of implants having the first dopant type and beingseparated from each other in the first direction; and a fourth set ofimplants in a second portion of the fourth well, each implant of thefourth set of implants having the first dopant type and being separatedfrom each other in the first direction, wherein the first portion of thefourth well is separated from the second portion of the fourth well inthe first direction.
 18. The integrated circuit structure of claim 17,further comprising: a fifth set of implants in a third portion of thefourth well, each implant of the fifth set of implants having the seconddopant type and being separated from each other in the first direction,and at least one implant of the fifth set of implants being configuredto be coupled to a reference supply voltage, wherein the third portionof the fourth well is between the first portion of the fourth well andthe second portion of the fourth well.
 19. The integrated circuitstructure of claim 16, further comprising: a first set of standard cellscomprising a first set of transistors, the first set of standard cellsbeing arranged in rows and columns, the second well being part of thefirst set of standard cells, wherein the second portion of the firstwell continuously extends through the first set of standard cells in thefirst direction.
 20. The integrated circuit structure of claim 19,wherein a second set of standard cells comprising a second set oftransistors, the second set of standard cells being arranged in rows andcolumns, the third well being part of the second set of standard cells,wherein the second portion of the first well continuously extendsthrough the second set of standard cells in a third direction oppositefrom the first direction.